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PD-300Q
PUDIVAC
PUDIVAC RF Plasma Cleaner (Radio Frequency Plasma Cleaner) is an advanced surface treatment device that utilizes radio frequency (typically 13.56 MHz) to generate plasma from process gases (e.g., Ar, O₂, N₂, CF₄). This plasma effectively removes organic contaminants, oxides, and particles from surfaces through physical bombardment and chemical reactions, enhancing surface properties for various industrial and scientific applications.
RF Power Supply (13.56 MHz)
Generates an electromagnetic field to ionize gas molecules.
A matching network ensures efficient energy transfer and minimizes reflected power.
Plasma Chamber (Vacuum Environment)
Capacitively Coupled Plasma (CCP): Uses parallel electrodes; high-energy ions for physical cleaning.
Inductively Coupled Plasma (ICP): Uses an RF coil for higher plasma density, suitable for chemical cleaning.
Operates under low pressure (typically 0.01–10 Pa) to sustain plasma.
Two common excitation methods:
Plasma Cleaning Mechanisms
Physical Etching: Energetic ions (e.g., Ar⁺) bombard surfaces, removing contaminants via sputtering.
Chemical Etching: Reactive species (e.g., O⁺ radicals) break down organic residues into volatile byproducts (CO₂, H₂O).
Vacuum System
Includes rotary pumps and turbomolecular pumps to maintain low-pressure conditions.
Gas Delivery System
Introduces process gases (O₂ for organic removal, Ar for gentle cleaning, CF₄ for silicon etching).
Pudi Vacuum offers three RF plasma cleaning systems, designed to accommodate different sample sizes for versatile applications in semiconductors, optics, medical devices, and material science.
PD-150Q
Max Sample Size: 120 × 120 mm
Ideal for: Small-scale R&D, precision components, and lab testing.
PD-300Q
Max Sample Size: 260 × 260 mm
Ideal for: Medium-sized substrates, industrial prototyping, and batch processing.
PD-600Q
Max Sample Size: 500 × 500 mm
Ideal for: Large panels, production-scale cleaning, and high-throughput applications.
RF Frequency: 13.56 MHz (industry-standard) for stable plasma generation.
Multi-gas Compatibility: Supports O₂, Ar, N₂, CF₄, and other process gases.
Uniform Cleaning: Optimized electrode design for consistent surface treatment.
User-Friendly Interface: Programmable controls for power, time, and gas flow.
Decontamination of organic residues, oxide removal, and surface activation.
Suitable for wafers, glass, metals, polymers, and 3D-structured components.
✔ Scalability – From R&D to full production.
✔ Reliability – Robust vacuum and RF systems for long-term performance.
✔ Customization – Optional upgrades (ICP source, automation integration).
For technical specifications or a tailored solution, feel free to contact us by
PUDIVAC RF Plasma Cleaner (Radio Frequency Plasma Cleaner) is an advanced surface treatment device that utilizes radio frequency (typically 13.56 MHz) to generate plasma from process gases (e.g., Ar, O₂, N₂, CF₄). This plasma effectively removes organic contaminants, oxides, and particles from surfaces through physical bombardment and chemical reactions, enhancing surface properties for various industrial and scientific applications.
RF Power Supply (13.56 MHz)
Generates an electromagnetic field to ionize gas molecules.
A matching network ensures efficient energy transfer and minimizes reflected power.
Plasma Chamber (Vacuum Environment)
Capacitively Coupled Plasma (CCP): Uses parallel electrodes; high-energy ions for physical cleaning.
Inductively Coupled Plasma (ICP): Uses an RF coil for higher plasma density, suitable for chemical cleaning.
Operates under low pressure (typically 0.01–10 Pa) to sustain plasma.
Two common excitation methods:
Plasma Cleaning Mechanisms
Physical Etching: Energetic ions (e.g., Ar⁺) bombard surfaces, removing contaminants via sputtering.
Chemical Etching: Reactive species (e.g., O⁺ radicals) break down organic residues into volatile byproducts (CO₂, H₂O).
Vacuum System
Includes rotary pumps and turbomolecular pumps to maintain low-pressure conditions.
Gas Delivery System
Introduces process gases (O₂ for organic removal, Ar for gentle cleaning, CF₄ for silicon etching).
Pudi Vacuum offers three RF plasma cleaning systems, designed to accommodate different sample sizes for versatile applications in semiconductors, optics, medical devices, and material science.
PD-150Q
Max Sample Size: 120 × 120 mm
Ideal for: Small-scale R&D, precision components, and lab testing.
PD-300Q
Max Sample Size: 260 × 260 mm
Ideal for: Medium-sized substrates, industrial prototyping, and batch processing.
PD-600Q
Max Sample Size: 500 × 500 mm
Ideal for: Large panels, production-scale cleaning, and high-throughput applications.
RF Frequency: 13.56 MHz (industry-standard) for stable plasma generation.
Multi-gas Compatibility: Supports O₂, Ar, N₂, CF₄, and other process gases.
Uniform Cleaning: Optimized electrode design for consistent surface treatment.
User-Friendly Interface: Programmable controls for power, time, and gas flow.
Decontamination of organic residues, oxide removal, and surface activation.
Suitable for wafers, glass, metals, polymers, and 3D-structured components.
✔ Scalability – From R&D to full production.
✔ Reliability – Robust vacuum and RF systems for long-term performance.
✔ Customization – Optional upgrades (ICP source, automation integration).
For technical specifications or a tailored solution, feel free to contact us by
